M.2
Ultra iSLC Solution
M.2 (S80) 3IE7
Features
- Up to 100K P/E cycle, extending the lifespan by 33x
- Utilizes Ultra iSLC Technology
- Equipped with 112-layer 3D TLC NAND Flash
- Supports temperatures -40°C to 85°C
- 5 years warranty and longevity commitment
The Innodisk M.2 (S80) 3IE7 is a SATA III 6.0 Gb/s flash-based drive tailored for industrial applications. Powered by exclusive Ultra iSLC Technology, it boosts storage lifespan to 100K P/E cycles. The drive supports essential features such as Thermal Sensor, TRIM, NCQ, and S.M.A.R.T., and comes with Innodisk’s exclusive industrial-grade firmware, offering flexible customization options. This makes it an ideal choice for a wide range of industrial environments.
100K P/E CYCLE, 33X LIFESPAN
The M.2 (S80) 3IE7, featuring BiCS5 112-layer 3D TLC NAND Flash and Innodisk's exclusive Ultra iSLC Technology, achieves an industry-leading 100K P/E cycle. This advancement extends the device lifespan by 33 times compared to conventional 3D TLC NAND Flash.
iData Guard – DATA PROTECTION TECHNOLOGY
iData Guard enables the immediate sending of a command in the event of a sudden power failure, interrupting read and write commands from the system and ensuring that the last command can be completed. This preserves data integrity on the SSD, protecting data security.
IMPLEMENTED WITH SUCCESS IN DYNAMIC ENVIRONMENTS
EMPOWERING TELECOM NETWORKS: OVERCOMING DATA OVERLOAD WITH iSLC TECHNOLOGY
In today's fast-evolving telecommunications landscape, the demand for intensive network transmissions has reached unprecedented levels. For leading telecommunications service providers, this rapid surge brings a series of intricate challenges that demand immediate attention.
SPECIFICATIONS
| Model Name | M.2 (S80) 3IE7 |
|---|---|
| Flash Type | iSLC (3D TLC) |
| Interface | SATA III 6.0 Gb/s |
| Form Factor | M.2 2280 B+M Key |
| Capacity | 20GB ~ 640GB |
| Sequential R / W (MB/sec, max.) | 560 / 500 |
| P/E Cycle | 30,000 / 100,000 |
| TBW (Max.) | 40,000 |
| Storage Temperature | -40°C ~ 85°C |
| Max. Power Consumption | 1.6W |
| Max. Channels | 4 |
| External DRAM Buffer | N |
| Feature | AES, H/W Write Protect, S.M.A.R.T. |
| Dimension (W x L x H/mm) | 22.0 x 80.0 x 3.5 |
| Vibration | 20G@[7 ~ 2000Hz] |
| Shock | [email protected] |
| MTBF | >3 million hours |
| Warranty | 5 Years |
ORDER INFORMATION
Operating Temperature | Standard Grade (0°C ~ 70°C) | Industrial Grade (-40°C ~ 85°C) |
20GB | DHM28-20GDK1EC*DF | DHM28-20GDK1EW*DF |
40GB | DHM28-40GDK1%C*&F | DHM28-40GDK1%W*&F |
80GB | DHM28-80GDK1%C*QF | DHM28-80GDK1%W*QF |
160GB | DHM28-A60DK1%C*QF | DHM28-A60DK1%W*QF |
320GB | DHM28-D2GDK1%CAQF | DHM28-D2GDK1%WAQF |
640GB | DHM28-F4GDK1KCAQF | DHM28-F4GDK1KWAQF |
%. E : 64 layers 3D TLC / K : 112 layers 3D TLC
*. PCB version control
&. S : 1 channel / D : 2 channels / Q : 4 channels
