SD Card & MicroSD Card
4GB ~ 8GB
MicroSD Card 3SE3
Features
- SD 3.0 interface
- High performance
- Power fail management
- ECC algorithm implement
Innodisk MicroSD 3SE3 series, supporting class 10 with UHS-I (Except 8GB ), are specifically designed for industrial PC and embedded applications. The 3.0 series SD card has the latest firmware architecture and Flash algorithms, including superior wear leveling and read disturb management, ensuring the highest reliability and endurance.
Innodisk MicroSD 3SE3 series provides a wide range of capacities from 4GB to 8GB with excellent quality SLC NAND Flash and is fully compliant with SD 3.0 and SD 2.0 specifications.
With its low power consumption and features above, the Innodisk MicroSD 3SE3 series can be applied to industrial automation, SBC (single-board computer), medical equipment, infotainment, and mobile applications.
Wear Leveling Technology – EXTENDING PRODUCT LIFESPAN
Innodisk adopts innovative wear leveling technology to revolutionize SSD storage methods, thereby improving its lifespan. By applying this technology to both dynamic and static storage blocks, it eliminates the traditional concepts of hot zones and cold zones, achieving full-area wear balance and optimizing the use of every flash memory block.
IMPLEMENTED WITH SUCCESS IN DYNAMIC ENVIRONMENTS
TRANSPORTATION
Our solutions enhance operations, management, and security for EVs, buses, subways, and more.
INDUSTRIAL / EMBEDDED
Designed for harsh environments, our products offer high durability to meet the demands of industrial automation and embedded systems.
AUTOMATION
Enhancing efficiency in automated systems, our products provide precise data management and long-lasting performance in industrial applications.
RETAIL
Powering smart retail systems, our solutions enable efficient inventory management, seamless point-of-sale operations, and insightful customer analytics.
SPECIFICATIONS
| Model Name | MicroSD 3SE3 |
|---|---|
| Flash Type | SLC |
| Interface | SD 3.0 |
| Form Factor | MicroSD Card |
| Capacity | 4GB ~ 8GB |
| Sequential R / W (MB/sec, max.) | 30 / 23 |
| P/E Cycle | 60,000 |
| TBW (Max.) | 21 |
| Storage Temperature | -55°C ~ 95°C |
| Max. Power Consumption | 1.3W |
| Max. Channels | 1 |
| External DRAM Buffer | N |
| Features | S.M.A.R.T. |
| Dimension (W x L x H/mm) | 11.0 x 15.0 x 1.0 |
| Vibration | 20G@[7 ~ 2000Hz] |
| Shock | [email protected] |
| MTBF | >3 million hours |
| Warranty | 5 Years |
ORDER INFORMATION
| Operating Temperature | Extended Grade (-25°C ~ 85°C) | Industrial Grade (-40°C ~ 85°C) |
4GB | DESDM-04GS02AE1ST | DESDM-04GS02AW1ST |
8GB | DESDM-08GS02AE1ST | DESDM-08GS02AW1ST |
