
SD Card & MicroSD Card
Ultra iSLC Solution
MicroSD Card 3IE4
Features
- SD 3.0 interface
- Supports Class 10 with UHS-I
- Adopts TLC NAND Flash
- High performance
- Targeted for portable and stationary applications
- S.M.A.R.T. function supported
Innodisk MicroSD 3IE4 series, supporting Class 10 with UHS-I, are specifically designed for industrial PC and embedded applications. The 3.0 series SD card has the latest firmware architecture and Flash algorithms, including superior wear leveling and read disturb management, ensuring the highest reliability and endurance.
Innodisk MicroSD 3IE4 series provides a wide range of capacities from 8GB to 128GB with excellent quality TLC NAND Flash and is fully compliant with SD 3.0 and SD 2.0 specifications.
With its low power consumption and features above, the Innodisk MicroSD 3IE4 series can be applied to industrial automation, SBC (single-board computer), medical equipment, infotainment, and mobile applications.
100K P/E CYCLE, 33X LIFESPAN
The MicroSD Card 3IE4, featuring BiCS5 112-layer 3D TLC NAND Flash and Innodisk's exclusive Ultra iSLC Technology, achieves an industry-leading 100K P/E cycle. This advancement extends the device lifespan by 33 times compared to conventional 3D TLC NAND Flash.

Wear Leveling Technology – EXTENDING PRODUCT LIFESPAN
Innodisk adopts innovative wear leveling technology to revolutionize SSD storage methods, thereby improving its lifespan. By applying this technology to both dynamic and static storage blocks, it eliminates the traditional concepts of hot zones and cold zones, achieving full-area wear balance and optimizing the use of every flash memory block.

IMPLEMENTED WITH SUCCESS IN DYNAMIC ENVIRONMENTS
SPECIFICATIONS
Model Name | MicroSD Card 3IE4 |
---|---|
Flash Type | iSLC (3D TLC) |
Interface | SD 3.0, SD 6.1 |
Form Factor | MicroSD Card |
Capacity | 8GB ~ 128GB |
Sequential R / W (MB/sec, max.) | 90 / 80 |
P/E Cycle | 30,000 / 100,000 |
TBW (Max.) | 11,360 |
Storage Temperature | -40°C ~ 85°C |
Max. Power Consumption | 0.7W |
Max. Channels | 1 |
External DRAM Buffer | N |
Features | S.M.A.R.T. |
Dimension (W x L x H/mm) | 11.0 x 15.0 x 1.0 |
Vibration | 20G@[7 ~ 2000Hz] |
Shock | [email protected] |
MTBF | >3 million hours |
Warranty | 5 Years |
ORDER INFORMATION
Operating Temperature | Extended Temperature (-25°C ~ 85°C) | Industrial Temperature (-40°C ~ 85°C) |
8GB | DHSDM-08GS06EE1SL | DHSDM-08GS06EW1SL |
16GB | DHSDM-16GS06%E1SL | DHSDM-16GS06%W1SL |
32GB | DHSDM-32GS06%E1SL | DHSDM-32GS06%W1SL |
64GB | DHSDM-64GS06%E1SL | DHSDM-64GS06%W1SL |
128GB | DHSDM-A28S06%E1SL | DHSDM-A28S06%W1SL |
%. G : 96 layers 3D TLC / K : 112 layers 3D TLC
8GB is only supported by 64 layers 3D TLC